? semiconductor components industries, llc, 2013 december, 2013 ? rev. 13 1 publication order number: mje340/d mje340g plastic medium-power npn silicon transistor this device is useful for high?voltage general purpose applications. features ? suitable for transformerless, line?operated equipment ? thermopad construction provides high power dissipation rating for high reliability ? these devices are pb?free and are rohs compliant* ? complementary to mje350 maximum ratings rating symbol value unit collector?emitter voltage v ceo 300 vdc emitter?base voltage v eb 3.0 vdc collector current ? continuous i c 500 madc total power dissipation @ t c = 25 c derate above 25 c p d 20 0.16 w mw/ c operating and storage junction temperature range t j , t stg ?65 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case jc 6.25 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (i c = 1.0 madc, i b = 0) v ceo(sus) 300 ? vdc collector cutoff current (v cb = 300 vdc, i e = 0) i cbo ? 100 adc emitter cutoff current (v eb = 3.0 vdc, i c = 0) i ebo ? 100 adc on characteristics dc current gain (i c = 50 madc, v ce = 10 vdc) h fe 30 240 ? product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information 0.5 ampere power transistor npn silicon 300 volts, 20 watts http://onsemi.com mje340g to?225 (pb?free) 500 units/box marking diagram y = year ww = work week je340 = device code g = pb?free package 3 base 1 emitter collector 2, 4 schematic to?225 case 77?09 style 1 1 2 3 yww je340g
mje340g http://onsemi.com 2 28 0 t c , case temperature ( c) 0 20 40 80 120 160 20 12 p d , power dissipation (watts) mje340 32 24 16 8.0 4.0 1.0 10 i c , collector current (ma) 0 20 30 50 100 200 500 0.4 0.8 0.6 v, voltage (volts) 0.2 300 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 10 v figure 1. power temperature derating figure 2. ?on? voltages 60 100 140 i c /i b = 5.0 figure 3. mje340 1.0 10 v ce , collector-emitter voltage (volts) 0.5 0.01 50 100 second breakdown limit bonding wire limit thermal limit t c = 25 c single pulse i c , collector current (amp) dc 10 s 0.3 0.05 20 30 1.0ms 200 300 0.2 70 0.1 0.03 0.02 t j = 150 c 500 s active?region safe operating area there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.the data of figure 3 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mje340g http://onsemi.com 3 i c , collector current (amp) h fe , dc current gain, normalized 7.0 10 0.02 0.03 0.1 4.0 0.01 1.0 0.7 0.5 0.1 0.05 0.3 0.5 0.2 150 c t j = 25 c -55 c figure 4. dc current gain figure 5. ?on? voltage 2.0 i c , collector current (amp) 1.6 0.4 0 t j = 25 c voltage (volts) v be(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v 5.0 0.3 0.2 1.2 0.8 t, time or pulse width (ms) 0.01 0.01 0.03 1.0 2.0 5.0 10 20 50 100 200 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), effective transient jc (t) = r(t) jc jc = 3.12 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 single pulse thermal resistance (normalized) figure 6. thermal response 0.5 d = 0.5 0.1 0.01 0.3 0.7 0.07 0.03 0.02 3.0 2.0 1.0 3.0 2.0 v ce = 1.0 vdc v ce(sat) @ i c /i b = 10 0.01 0.02 0.05 4.0 0.005 0.03 0.2 0.3 0.1 0.5 2.0 3.0 1.0 0.02 0.05 0.3 3.0 500 1000 0.02 0.05 0.2 i c , collector current (madc) h fe , dc current gain t j = 150 c +25 c v ce = 10 v v ce = 2.0 v -55 c figure 7. dc current gain 300 10 200 100 1.0 2.0 3.0 5.0 10 20 30 500 70 50 7.0 50 70 100 200 300 +100 c 30 20
mje340g http://onsemi.com 4 package dimensions to?225 case 77?09 issue ac dim min max millimeters d 10.60 11.10 e 7.40 7.80 a 2.40 3.00 b 0.60 0.90 p 2.90 3.30 l1 1.27 2.54 c 0.39 0.63 l 14.50 16.63 b2 0.51 0.88 q 3.80 4.20 a1 1.00 1.50 e 2.04 2.54 e 123 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. number and shape of lugs optional. 2x 2x q d l1 p b2 b e c l a1 a front view back view front view side view 1 2 3 3 2 1 4 pin 4 backside tab style 1: pin 1. emitter 2., 4. collector 3. base on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distribut ors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mje340/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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